FDMS3662 mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A
* Advanced Package and Silicon combination for low RDS(on)
* Lowers Switching Noise/EMI
* MSL1 Robust Pa.
* DC−DC Conversion
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDS
.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max RDS(on) = 14.8 mW at VGS = 10 V, I.
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